Accuracy assessment of elastic strain measurement by EBSD

Journal of Microscopy

Volumn 233, Issue 2, 2009, Pages 290-301

  Villert, S ^a,b   Maurice, C ^b   Wyon, C ^a   Fortunier, R ^b  

^a CEA LETI   (France)

^b IFR 143   (France)

Author keywords

EBSD pattern simulation; Elastic strain measurement; Electron backscatter diffraction; Finite element; Four point bending; SiGe layer

Indexed keywords

BACKSCATTERING; ELECTRON DIFFRACTION; FINITE ELEMENT METHOD; ITERATIVE METHODS; SI-GE ALLOYS; SILICON WAFERS; SINGLE CRYSTALS; STRAIN;

DIFFRACTION PATTERN SIMULATION; ELASTIC STRAIN MEASUREMENT; ELECTRON BACK SCATTER DIFFRACTION; ELECTRON BACKSCATTER DIFFRACTION; ELECTRON BACKSCATTER DIFFRACTION PATTERN SIMULATION; FINITE ELEMENT; FOUR-POINT-BENDING; SIGE LAYERS;

STRAIN MEASUREMENT;

GERMANIUM; SILICON;

ACCURACY; ARTICLE; CONTROLLED STUDY; ELASTIC FIBER; ELECTRON DIFFRACTION; FINITE ELEMENT ANALYSIS; HISTOGRAM; MEASUREMENT; PRIORITY JOURNAL; STAIN;

SIGE;

EID: 59149090573     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2009.03120.x     Document Type: Article

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