Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

Materials Letters

Volumn 92, Issue , 2013, Pages 338-341

  Su, Qing ^a   Li, Lijuan ^b   Li, Shanying ^a   Zhao, Haipeng ^a  

^a HENAN UNIVERSITY OF URBAN CONSTRUCTION   (China)

^b Department of Mechanical Engineering   (China)

Author keywords

Nanocrystalline materials; Nitrogen doped; Photoresponse; Semiconductors; ZnSe nanobelts

Indexed keywords

AMMONIA ATMOSPHERE; CRYSTAL QUALITIES; FAST RESPONSE; HIGH SENSITIVITY; INCIDENT LIGHT; NITROGEN-DOPED; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; P-TYPE; P-TYPE CONDUCTIVITY; PHOTORESPONSES; SINGLE-CRYSTALLINE; THERMAL EVAPORATION METHOD; ZINCBLENDE STRUCTURES; ZNTE NANOWIRE;

CRYSTAL STRUCTURE; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; NANOCRYSTALLINE MATERIALS; NANOWIRES; SEMICONDUCTOR MATERIALS; THERMAL EVAPORATION; ZINC COMPOUNDS;

NANOBELTS;

EID: 84871390177     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.10.112     Document Type: Article

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