Structural and optical characterizations of nitrogen-doped ZnO nanowires grown by MOCVD

Materials Letters

Volumn 64, Issue 19, 2010, Pages 2112-2114

  Marzouki, A ^a,c   Falyouni, F ^a   Haneche, N ^a   Lusson, A ^a   Galtier, P ^a   Rigutti, L ^b   Jacopin, G ^b   Tchernycheva, M ^b   Oueslati, M ^c   Sallet, V ^a  

^a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

Author keywords

A1.Doping; A3.MOCVD; B1.Oxides; B2.Semiconducting II VI materials

Indexed keywords

CHEMICAL ANALYSIS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; NITROGEN; NITROGEN COMPOUNDS; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; QUALITY CONTROL; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

A1.DOPING; A3.MOCVD; B1.OXIDES; DONOR-ACCEPTOR PAIR TRANSITIONS; HIGH-CRYSTALLINE QUALITY; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MICROPHOTOLUMINESCENCE SPECTROSCOPY; STRUCTURAL AND OPTICAL CHARACTERIZATIONS;

DOPING (ADDITIVES);

EID: 77954801754     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.06.056     Document Type: Article

References (22)

1. C.H. Park, S.B. Zhang, and S.H. Wei Phys Rev B 66 2002 073202
2. T. Ohshima, T. Ikegami, K. Ebihara, J. Asmussen, and R. Thareja Thin Solid Films 435 2003 49
3. Z.Y. Xiao, Y.C. Liu, R. Mu, D.X. Zhao, and J.Y. Zhang Appl Phys Lett 92 2008 052106
4. A. Allenic, W. Guo, Y.B. Chen, G.Y. Zhao, X.Q. Pan, and Y. Che J Mater Res 22 2007 2339
5. G.T. Du, Y. Ma, Y.T. Zhang, and T.P. Yang Appl Phys Lett 87 2005 213103
6. M. Lorenz, E.M. Kaidashev, A. Rahm, Th. Nobis, J. Lenzner, and G. Wagner Appl Phys Lett 86 2005 143113
7. Z. Li, X. Huang, J. Liu, Y. Li, and G. Li Mater Lett 62 2008 1503 1506
8. A. Bakin, A. Che Mofor, A. El-Shaer, and A. Waag Superlattices Microstruct 42 2007 33
9. W.I. Park, D.H. Kim, S.-W. Jung, and G.C. Yi Appl Phys Lett 80 2002 4232
10. R. Kling, C. Kirchner, Th. Gruber, F. Reuss, and A. Waag Nanotechnology 15 2004 1043
11. K. Ogata, K. Maejima, Sz. Fujita, and Sg. Fujita J Cryst Growth 248 2003 25
12. C. Sartel, V. Sallet, A. Lusson, N. Haneche, J.M. Laroche, and P. Galtier J Vacuum Sci Technol B 27 2009 1615
13. F. Falyouni, L. Benmamas, C. thiandoume, J. Barjon, A. Lusson, and P. Galtier J Vacuum Sci Technol B 27 2009 1662
14. B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegreis, D. Forster, and F. Bertram Phys Stat Sol (b) 241 No. 2 2004 231 260
15. M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Freneberg, and J. Biskupek Phys Rev B 77 2008 125215
16. E.C. Lee, Y.S. Kim, Y.G. Jin, and K.J. Chang Phys B: Condens Matter 308 2001 912 915
17. T.C. Damen, S.P.S. Porto, and B. Tell Phys Rev 142 1966 570
18. J.M. Calleja, and M. Cardona Phys Rev B 16 1977 3753
19. B. Yang, P. Feng, A. Kumar, R.S. Katiyar, and M. Achermann Appl Phys 42 2009 195402
20. A. Kaschner, U. Haboeck, Martin Strassburg, Matthias Strassburg, G. Kaczmarczyk, and A. Hoffmann Appl Phys Lett 80 2002 1909
21. L.L. Kerr, X. Li, M. Canepa, and A.J. Sommer Thin Solid Films 515 2007 5282
22. F. Friedrich, M.A. Gluba, and N.H. Nickel Appl Phys Lett 95 2009 141903