High-performance CdS:P nanoribbon field-effect transistors constructed with high- κ dielectric and top-gate geometry

Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

  Wu, Di ^a   Jiang, Yang ^a   Wang, Li ^a   Li, Shanying ^a,b   Wu, Bo ^a   Lan, Xinzheng ^a   Yu, Yongqiang ^a   Wu, Chunyan ^a   Wang, Zhuangbing ^a   Jie, Jiansheng ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b HENAN UNIVERSITY OF URBAN CONSTRUCTION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CDS; CDS NANORIBBON; HIGH SENSITIVITY; LIGHT IRRADIATIONS; NANORIBBONS; OPTOELECTRONIC APPLICATIONS; ORDERS OF MAGNITUDE; PHOSPHORUS-DOPED; SI SUBSTRATES; SUBTHRESHOLD SWING; TOP-GATE;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; DATA STORAGE EQUIPMENT; HAFNIUM COMPOUNDS; MESFET DEVICES; PHOSPHORUS; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77950311128     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3360206     Document Type: Article

References (15)

1. R. Agarwal and C. M. Lieber, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 85, 209 (2006). 10.1007/s00339-006-3720-z
2. J. S. Jie, W. J. Zhang, Y. Jiang, and S. T. Lee, Appl. Phys. Lett. APPLAB 0003-6951 89, 223117 (2006). 10.1063/1.2398891
3. Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, Adv. Funct. Mater. AFMDC6 1616-301X 17, 1795 (2007). 10.1002/adfm.200600351
4. J. S. Jie, W. J. Zhang, Y. Jiang, and S. T. Lee, Appl. Phys. Lett. APPLAB 0003-6951 89, 133118 (2006). 10.1063/1.2345255
5. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. Mcintyre, P. Mceuen, M. Lundstrom, and H. J. Dai, Nature Mater. NMAACR 1476-1122 1, 241 (2002). 10.1038/nmat769
6. B. Xiang, P. W. Wang, X. Z. Zhang, S. A. Dayeh, D. P. R. Aplin, C. Soci, D. P. Yu, and D. L. Wang, Nano Lett. NALEFD 1530-6984 7, 323 (2007). 10.1021/nl062410c
7. Y. Wang, Y. Jiang, D. Wu, Y. P. Sheng, L. L. Chen, G. H. Li, and J. S. Jie, J. Nanosci. Nanotechnol. JNNOAR 1533-4880 10, 2010 (2009).
8. J. -M. Lee, I. -T. Cho, J. -H. Lee, W. -S. Cheong, C. -S. Hwang, and H. -I. Kwon, Appl. Phys. Lett. APPLAB 0003-6951 94, 222112 (2009). 10.1063/1.3151865
9. X. H. Zhang, B. Domercq, X. D. Wang, S. Yoo, T. Kondo, Z. L. Wang, and B. Kippelen, Org. Electron. OERLAU 1566-1199 8, 718 (2007). 10.1016/j.orgel.2007. 06.009
10. Y. K. Park, A. Umar, S. H. Kim, J. H. Kim, E. W. Lee, M. Vaseem, and Y. B. Hahn, J. Nanosci. Nanotechnol. JNNOAR 1533-4880 8, 6010 (2008). 10.1166/jnn.2008.478
11. P. C. Wu, R. M. Ma, C. Liu, T. Sun, Y. Ye, and L. Dai, J. Mater. Chem. JMACEP 0959-9428 19, 2125 (2009). 10.1039/b822518d
12. Z. Y. Zhang, S. Wang, L. Ding, X. L. Liang, H. L. Xu, J. Shen, Q. Chen, R. L. Cui, Y. Li, and L. M. Peng, Appl. Phys. Lett. APPLAB 0003-6951 92, 133117 (2008). 10.1063/1.2907696
13. Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. NALEFD 1530-6984 3, 149 (2003). 10.1021/nl025875l
14. P. C. Chang, Z. Fan, C. J. Chien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett. APPLAB 0003-6951 89, 133113 (2006). 10.1063/1.2357013
15. J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, Nano Lett. NALEFD 1530-6984 6, 1887 (2006). 10.1021/nl060867g