Enhanced p-type conductivity of ZnTe nanoribbons by nitrogen doping

Journal of Physical Chemistry C

Volumn 114, Issue 17, 2010, Pages 7980-7985

  Li, Shanying ^a,b   Jiang, Yang ^a   Wu, Di ^a   Wang, Li ^a   Zhong, Honghai ^a   Wu, Bo ^a   Lan, Xinzheng ^a   Yu, Yongqiang ^a   Wang, Zhuangbing ^a   Jie, Jiansheng ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b HENAN UNIVERSITY OF URBAN CONSTRUCTION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE DIRECTION; DEFECT REACTIONS; DOPANT CONTENT; ELECTRICAL MEASUREMENT; LOW RESISTIVITY; N-DOPED; N-DOPING; NANORIBBONS; NITROGEN-DOPING; P-TYPE; P-TYPE BEHAVIORS; P-TYPE CONDUCTIVITY; POTENTIAL APPLICATIONS; SINGLE-CRYSTALLINE; THERMAL EVAPORATION METHOD; ZINCBLENDE STRUCTURES;

ARGON; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; HOLE MOBILITY; NITROGEN; OPTOELECTRONIC DEVICES; SYNTHESIS (CHEMICAL); THERMAL EVAPORATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ZINC COMPOUNDS;

EID: 77951920710     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp911873j     Document Type: Article

References (43)

1. Jiang, Y.; Zhang, W. J.; Jie, J. S.; Meng, X. M.; Fan, X.; Lee, S. T. Adv. Funct. Mater. 2007, 17 (11) 1795-1800
2. Jie, J. S.; Zhang, W. J.; Jiang, Y.; Meng, X. M.; Li, Y. Q.; Lee, S. T. Nano Lett. 2006, 6 (9) 1887-1892
3. Jiang, Y.; Meng, X. M.; Liu, J.; Hong, Z. R.; Lee, C. S.; Lee, S. T. Adv. Mater. 2003, 15 (14) 1195-1198
4. Pan, Z. W.; Dai, Z. R.; Wang, Z. L. Science 2001, 291 (5510) 1947-1949
5. Wang, Z. L.; Song, J. H. Science 2006, 312 (5771) 242-246
6. Janik, E.; Dluzewski, P.; Kret, S.; Presz, A.; Kirmse, H.; Neumann, W.; Zaleszczyk, W.; Baczewski, L. T.; Petroutchik, A.; Dynowska, E.; Sadowski, J.; Caliebe, W.; Karczewski, G.; Wojtowicz, T. Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies Nanotechnology 2007, 18, 475606
7. Jie, J. S.; Zhang, W. J.; Jiang, Y.; Meng, X. M.; Zapien, J. A.; Shao, M. W.; Lee, S. T. Nanotechnology 2006, 17 (12) 2913-2917
8. Jie, J. S.; Zhang, W. J.; Jiang, Y.; Lee, S. T. App. Phys. Let. 2006, 89 (22) 223117
9. Wang, Z. L. Acs Nano 2008, 2 (10) 1987-1992
10. Zappettini, A.; Spano, N.; Mazzera, M.; Guadalupi, G. M.; Paorici, C. J. Cryst. Growth 2008, 310 (7-9) 2080-2084
11. Tianling Ren, J. Z. Comput. Appl.Chem. 1998, 15 (6) 327-332
12. Zumbiehl, A.; Mergui, S.; Ayoub, M.; Hage-Ali, M.; Zerrai, A.; Cherkaoui, K.; Marrakchi, G.; Darici, Y. Mater. Sci. Eng., B 2000, 71 (1-3) 297-300
13. Wang, Z. L. Mater. Sci. Eng., R 2009, 64 (3-4) 33-71
14. Majumdar, S.; Chattopadhyay, S.; Banerji, P. Appl. Surf. Sci. 2009, 255 (12) 6141-6144
15. Yuan, G. D.; Zhang, W. J.; Jie, J. S.; Fan, X.; Zapien, J. A.; Leung, Y. H.; Luo, L. B.; Wang, P. F.; Lee, C. S.; Lee, S. T. Nano Lett. 2008, 8 (8) 2591-2597
16. Yuan, G. D.; Zhang, W. J.; Zhang, W. F.; Fan, X.; Bello, I.; Lee, C. S.; Lee, S. T. Appl. Phys. Lett. 2008, 93 (21) 213102
17. Song, H. S.; Zhang, W. J.; Yuan, G. D.; He, Z. B.; Zhang, W. F.; Tang, Y. B.; Luo, L. B.; Lee, C. S.; Bello, I.; Lee, S. T. Appl. Phys. Lett. 2009, 95 (3) 033117
18. Adachi, S. Properties of Group-IV, III-V and II-VI Semiconductors; Wiley Press: West Sussex, U.K., 2005; pp 127, 339.
19. Zhang, J.; Chen, P. C.; Shen, G. Z.; He, J. B.; Kumbhar, A.; Zhou, C. W.; Fang, J. Y. Angew. Chem., Int. Ed. 2008, 47 (49) 9469-9471
20. Lieber, C. M.; Wang, Z. L. MRS Bull. 2007, 32 (2) 99-108
21. Meng, Q. F.; Jiang, C. B.; Mao, S. X. Appl. Phys. Let. 2009, 94 (4) 043111
22. Sato, K. T. A.; Hanafusa, M.; Noda, A.; Arakawa, A.; Uchida, M.; Oda, O.; Yamada, Y.; Taguchi, T. Phys. Status Solidi A 2000, 180 (1) 267-274
23. Tit, N. J. Vac. Sci. Technol., A 2004, 22 (3) 821-825
24. Kröger, F. A. J. Phys. Chem. 1965, 69 (10) 3367-3369
25. John, V. S.; Mahalingam, T.; Chu, J. P. Solid State Electron. 2005, 49 (1) 3-7
26. Li, L.; Yang, Y. W.; Huang, X. H.; Li, G. H.; Zhang, L. D. J. Phys. Chem. B 2005, 109 (25) 12394-12398
27. Yong, K. T.; Sahoo, Y.; Zeng, H.; Swihart, M. T.; Minter, J. R.; Prasad, P. N. Chem. Mater. 2007, 4108-4110
28. Colli, A.; Fasoli, A.; Hofmann, S.; Ducati, C.; Robertson, J.; Ferrari, A. C. Nanotechnology 2006, 17 (4) 1046-1051
29. Huo, H. B.; Dai, L.; Liu, C.; You, L. P.; Yang, W. Q.; Ma, R. M.; Ran, G. Z.; Qin, G. G. Nanotechnology 2006, 17 (24) 5912-5915
30. Yamamoto, T. Jpn. J. Appl. Phys. 2 2003, 42 (5B) L514-L516
31. Cao, P.; Zhao, D. X.; Zhang, J. Y.; Shen, D. Z.; Lu, Y. M.; Yao, B.; Li, B. H.; Bai, Y.; Fan, X. W. Appl. Surf. Sci. 2008, 254 (9) 2900-2904
32. Baron, T.; Tatarenko, S.; Saminadayar, K.; Magnea, N.; Fontenille, J. Appl. Phys. Lett. 1994, 65 (10) 1284-1286
33. Tamargo, M. C. II-VI Semiconductor Materials and their Applications, 1st ed.; Optoelectronic Properties of Semiconductors and Superlattices, Vol. 12; CRC Press: New York, 2002; p 92.
34. Meng, Q. F.; Jiang, C. B.; Mao, S. X. J. Cryst. Growth 2008, 310 (20) 4481-4486
35. Huo, H. B.; Dai, L.; Xia, D. Y.; Ran, G. Z.; You, L. P.; Zhang, B. R.; Qin, G. G. J. Nanosci. Nanotechnol. 2006, 6 (4) 1182-1184
36. Sze, S. M.; Ng, K. K.. Physics of Semiconductor Devices, 3rd ed; Wiley Press: New Jersey, 1981; Chapter 8.2, p 456.
37. Javey, A.; Kim, H.; Brink, M.; Wang, Q.; Ural, A.; Guo, J.; McIntyre, P.; McEuen, P.; Lundstrom, M.; Dai, H. J. Nat. Mater. 2002, 1 (4) 241-246
38. Bhattacharyya, D.; Chaudhuri, S.; Pal, A. K. Mater. Chem. Phys. 1995, 40 (1) 44-49
39. Bensahel, D.; Dupuy, M.; Pfister, J. C. J. Cryst. Growth 1979, 47 (5-6) 727-732
40. Wang, W. W.; Xia, G. P.; Zheng, J. G.; Feng, L. H.; Hao, R. Y. J. Mater. Sci. Mater. Electron. 2007, 18 (4) 427-431
41. Murali, K. R.; Rajkumar, P. R. J. Mater. Sci. Mater. Electron. 2006, 17 (5) 393-396
42. Mann, J. B.; Meek, T. L.; Allen, L. C. J. Am. Chem. Soc. 2000, 122 (12) 2780-2783
43. Mann, J. B.; Meek, T. L.; Knight, E. T.; Capitani, J. F.; Allen, L. C. Configuration Energies of the d-Block Elements J. Am. Chem. Soc. 2000, 122 (21) 5132-5137