P -type conduction in arsenic-doped ZnSe nanowires

Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

  Song, H S ^a   Zhang, W J ^a   Yuan, G D ^a   He, Z B ^a   Zhang, W F ^a   Tang, Y B ^a   Luo, L B ^a   Lee, C S ^a   Bello, I ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC ATOM; DOPANT SOURCES; H-BONDS; P-TYPE CONDUCTION; POSTGROWTH ANNEALING; STRUCTURE AND ORIENTATION; ZNSE NANOWIRES;

ARSENIC; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; TRANSPORT PROPERTIES; ZINC;

DOPING (ADDITIVES);

EID: 67651240712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3186359     Document Type: Article

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