Radiation effects in carbon nanoelectronics

Electronics (Switzerland)

Volumn 1, Issue 1, 2012, Pages 23-31

  Cress, Cory D ^a   McMorrow, Julian J ^b   Robinson, Jeremy T ^a   Landi, Brian J ^c   Hubbard, Seth M ^c   Messenger, Scott R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Global Strategies Group North America   (United States)

^c ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carbon nanoelectronics; FET; Graphene; Radiation hardening; Single walled carbon nanotubes; SWCNT; TID; Total ionizing dose

Indexed keywords

EID: 84871363535     PISSN: None     EISSN: 20799292     Source Type: Journal    
DOI: 10.3390/electronics1010023     Document Type: Article

References (24)

1. Kocabas, C.; Kim, H.-S.; Banks, T.; Rogers, J.A.; Pesetski, A.A.; Baumgardner, J.E.; Krishnaswamy, S.V.; Zhang, H. Radio frequency analog electronics based on carbon nanotube transistors. Proc. Natl. Acad. Sci. USA 2008, 105, 1405-1409.
2. Cress, C.D.; Schauerman, C.M.; Landi, B.J.; Messenger, S.R.; Raffaelle, R.P.; Walters, R.J. Radiation effects in single-walled carbon nanotube papers. J. Appl. Phys. 2010, 107, 014316.
3. Krasheninnikov, A.V.; Nordlund, K. Ion and electron irradiation-induced effects in nanostructured materials. J. Appl. Phys. 2010, 107, 071301.
4. Kaiser, A.B.; Skákalová, V.; Roth, S. Modelling conduction in carbon nanotube networks with different thickness, chemical treatment and irradiation. Phys. E 2008, 40, 2311-2318.
5. Hong, W.-K.; Lee, C.; Nepal, D.; Geckeler, K.; Shin, K.; Lee, T. Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation. Nanotechnology 2006, 17, 5675-5680.
6. Comfort, E.S.; Fishman, M.; Malapanis, A.; Hughes, H.; McMarr, P.; Cress, C.D.; Bakhru, H.; Lee, J.U. Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube Diodes. Nucl. Sci. 2011, 58, 2898-2903.
7. Ko, G.; Kim, H.Y.; Ren, F.; Pearton, S.J.; Kim, J. Electrical characterization of 5 MeV proton-irradiated few layer graphene. Electrochem. Solid State Lett. 2010, 13, K32-K34.
8. Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Friedman, A.L.; Landi, B.J. Radiation effects in single-walled carbon nanotube thin-film-transistors. IEEE Trans. Nucl. Sci. 2010, 57, 3040-3045.
9. Tang, X.; Yang, Y.; Kim, W.; Wang, Q.; Qi, P.; Dai, H. Measurement of ionizing radiation using carbon nanotube field effect transistor. Phys. Med. Biol. 2005, 50, N23-N31.
10. Vitusevich, S.A.; Sydoruk, V.A.; Petrychuk, M.V.; Danilchenko, B.A.; Klein, N.; Offenhäusser, A.; Ural, A.; Bosman, G. Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment. J. Appl. Phys. 2010, 107, 063701.
11. Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Friedman, A.L.; Hughes, H.L.; Weaver, B.D.; Landi, B.J. Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics. MRS Commun. 2011, 1, 27-31.
12. Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation-hardening of carbon nanoelectronics. In Proceedings of the Government Microcircuit Applications and Critical Technologies Conference, Orlando, FL, USA, 2011; pp. 1-5.
13. Schrimpf, R.D.; Fleetwood, D.M.; Alles, M.L.; Reed, R.A.; Lucovsky, G.; Pantelides, S.T. Radiation effects in new materials for nano-devices. Microelectron. Eng. 2011, 88, 1-6.
14. Zhang, E.X.; Newaz, A.K.M.; Wang, B.; Bhandaru, S.; Zhang, C.X.; Fleetwood, D.M.; Bolotin, K.I.; Pantelides, S.T.; Alles, M.L.; Schrimpf, R.D., et al. Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices. IEEE Trans. Nucl. Sci. 2011, 58, 2961-2967.
15. Li, X.; Zhu, Y.; Cai, W.; Borysiak, M.; Han, B.; Chen, D.; Piner, R.; Colomba, L.; Ruoff, R. Transfer of large-area graphene films for high-performance transparent conductive electrodes. Nano Lett. 2009, 9, 4359-4363.
16. Oldham, T. Ionizing Radiation Effects in MOS Oxides; World Scientific: Singapore, 1999.
17. Le Thanh, V.; Bouchier, D.; Débarre, D. Fabrication of SiGe quantum dots on a Si(100) surface. Phys. Rev. B 1997, 56, 10505-10510.
18. Pietsch, G.J. Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing. Appl. Phys. A 1995, 60, 347-363.
19. Sui, Y.; Low, T.; Lundstrom, M.; Appenzeller, J. Signatures of disorder in the minimum conductivity of graphene. Nano Lett. 2011, 11, 1319-1322.
20. Adam, S.; Hwang, E.H.; Galitski, V.M.; Das Sarma, S. A self-consistent theory for graphene transport. Proc. Natl. Acad. Sci. USA 2007, 104, 18392-18397.
21. Yan, J.; Fuhrer, M. Correlated charged impurity scattering in graphene. Phys. Rev. Lett. 2011, 107, 206601.
22. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312-1314.
23. Javey, A.; Shim, M.; Dai, H. Electrical properties and devices of large-diameter single-walled carbon nanotubes. Appl. Phys. Lett. 2002, 80, 1064.
24. Saks, N.; Ancona, M.; Modolo, J. Radiation Effects in MOS Capacitors with Very Thin Oxides at 80 °K. IEEE Trans. Nucl. Sci. 1984, 31, 1249-1255.