Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment

Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

  Vitusevich, S A ^a   Sydoruk, V A ^a   Petrychuk, M V ^b   Danilchenko, B A ^c   Klein, N ^a   Offenhausser A ^a   Ural, A ^d   Bosman, G ^d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^d University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; CONTACT REGIONS; GAMMA RADIATION; HOOGE PARAMETERS; NOISE SPECTROSCOPY; RADIATION TREATMENTS; SINGLE-WALLED CARBON; TYPICAL VALUES; VOLTAGE RANGES; WORKING POINT; ZERO GATE;

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; GAMMA RAYS; MESFET DEVICES; RADIOTHERAPY; TRANSPORT PROPERTIES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 77950591271     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3340977     Document Type: Conference Paper

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