Radiation effects in single-walled carbon nanotube papers

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Cress, Cory D ^a   Schauerman, Christopher M ^b   Landi, Brian J ^b   Messenger, Scott R ^a   Raffaelle, Ryne P ^b   Walters, Robert J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; BULK MATERIALS; BULK SEMICONDUCTORS; CARBON IONS; DAMAGE COEFFICIENTS; DEFECT GENERATION; DISPLACEMENT DAMAGE DOSE; FLUENCES; HIGH-VACUUM ENVIRONMENTS; IN-SITU; INCIDENT PARTICLES; LINEAR RESPONSE; NON-LINEAR RELATIONSHIPS; NONIONIZING ENERGY LOSS; RADIATION RESPONSE; RADIATION-INDUCED; ROOM-TEMPERATURE CONDUCTIVITY; TEMPERATURE-DEPENDENT CONDUCTIVITY;

ALPHA PARTICLES; CARBON NANOTUBES; CHEMICAL MODIFICATION; ENERGY DISSIPATION; IONIZING RADIATION; RADIATION DAMAGE;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 75649121461     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3268470     Document Type: Article

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