Electrical characterization of 5 MeV proton-irradiated few layer graphene

Electrochemical and Solid-State Letters

Volumn 13, Issue 4, 2010, Pages

  Ko, G ^a   Kim, H Y ^a   Ren, F ^b   Pearton, S J ^b   Kim, J ^a  

^a Korea University   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR CONDUCTION; BEFORE AND AFTER; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; GRAPHENE SHEETS; GRAPHENES; HOLE CARRIERS; P-TYPE CONDUCTION; SURFACE STATE;

ELECTRIC PROPERTIES; GRAPHENE; GRAPHITE; HOLE MOBILITY; PROTONS;

PROTON IRRADIATION;

EID: 76749158942     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3290777     Document Type: Article

References (17)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 0036-8075, 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
2. R. M. Westervelt, Science 0036-8075, 320, 324 (2008). 10.1126/science.1156936 (Pubitemid 351559593)
3. Y. -M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer, and P. Avouris, Nano Lett. 1530-6984, 9, 422 (2009). 10.1021/nl803316h
4. G. Eda, G. Fanchini, and M. Chhowalla, Nat. Nanotechnol. 1748-3387, 3, 270 (2008). 10.1038/nnano.2008.83 (Pubitemid 351668055)
5. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, Nano Lett. 1530-6984, 8, 902 (2008). 10.1021/nl0731872
6. G. Ko and J. Kim, Electrochem. Solid-State Lett. 1099-0062, 12, H29 (2009). 10.1149/1.3023032
7. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nature Mater. 1476-1122, 6, 652 (2007). 10.1038/nmat1967 (Pubitemid 47359547)
8. S. Gilje, S. Han, M. Wang, K. L. Wang, and R. B. Kaner, Nano Lett. 1530-6984, 7, 3394 (2007). 10.1021/nl0717715 (Pubitemid 350216034)
9. G. Gu, S. Nie, R. M. Reenstra, R. P. Devaty, W. J. Choyke, W. K. Chan, and M. G. Kane, Appl. Phys. Lett. 0003-6951, 90, 253507 (2007). 10.1063/1.2749839 (Pubitemid 47141249)
10. J. H. Lee, D. W. Shin, V. G. Makotchenko, A. S. Nazarov, V. E. Fedorov, Y. H. Kim, J. -Y. Choi, J. M. Kim, and J. -B. Yoo, Adv. Mater. 0935-9648, 21, 4383 (2009). 10.1002/adma.200900726
11. X. Liang, Z. Fu, and S. Y. Chou, Nano Lett. 1530-6984, 7, 3840 (2007). 10.1021/nl072566s
12. L. Tapasztó, G. Dobrik, P. Nemes-Incze, G. Vertesy, P. Lambin, and L. P. Biro, Phys. Rev. B 0163-1829, 78, 233407 (2008). 10.1103/PhysRevB.78. 233407
13. C. Claeys and E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Devices, Springer-Verlag, Berlin (2002).
14. G. Lu, L. E. Ocola, and J. Chen, Appl. Phys. Lett. 0003-6951, 94, 083111 (2009). 10.1063/1.3086896
15. J. D. Fowler, M. J. Allen, V. C. Tung, Y. Yang, R. B. Kaner, and B. H. Weiller, ACS Nano 1936-0851, 3, 301 (2009). 10.1021/nn800593m
16. C. Lee, X. Wei, J. W. Kysar, and J. Hone, Science 0036-8075, 321, 385 (2008). 10.1126/science.1157996 (Pubitemid 352029970)
17. A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J. -L. Cantin, and S. Raymond, IEEE Trans. Nucl. Sci. 0018-9499, 49, 2733 (2002). 10.1109/TNS.2002.805363