Creation of individual defects at extremely high proton fluences in carbon nanotube p-n diodes

IEEE Transactions on Nuclear Science

Volumn 58, Issue 6 PART 1, 2011, Pages 2898-2903

  Comfort, Everett S ^a   Fishman, Matthew ^b   Malapanis, Argyrios ^a   Hughes, Harold ^c   McMarr, Patrick ^c   Cress, Cory D ^c   Bakhru, Hassaram ^a   Lee, Ji Ung ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Cornell University ^*  (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Carbon nanotubes; defect analysis; p n junctions; proton irradiation

Indexed keywords

DEFECT ANALYSIS; ION FLUENCES; KEY FEATURE; MINORITY CARRIER GENERATION; P-N DIODE; P-N JUNCTION; PROTON FLUENCES; RADIATION INDUCED DEFECTS; RE-CONFIGURABLE;

CARBON; CARBON NANOTUBES; DEFECTS; DIODES; PROTON IRRADIATION; PROTONS; SEMICONDUCTOR JUNCTIONS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 83855161603     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2170708     Document Type: Conference Paper

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