Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics

MRS Communications

Volumn 1, Issue 1, 2011, Pages 27-31

  Cress, C D ^a   McMorrow, J J ^b   Robinson, J T ^a   Friedman, A L ^a   Hughes, H L ^a   Weaver, B D ^a   Landi, B J ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Global Strategies Group North America   (United States)

^c ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85011518954     PISSN: 21596859     EISSN: 21596867     Source Type: Journal    
DOI: 10.1557/mrc.2011.10     Document Type: Article

References (13)

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