Radiation effects in single-walled carbon nanotube thin-film-transistors

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3040-3045

  Cress, Cory D ^a   McMorrow, Julian J ^b   Robinson, Jeremy T ^a   Friedman, Adam L ^a   Landi, Brian J ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Global Strategies Group North America   (United States)

^c ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carbon electronics; carbon nanotube field effect transistor; radiation effects; SWCNT TFT; total ionizing dose (TID)

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTOR; CHANNEL CONDUCTANCE; DENSITY GRADIENTS; DEVICE MOBILITIES; EXTRINSIC EFFECTS; EXTRINSIC FACTORS; GATE VOLTAGES; HOLE TRAPPING; IN-SITU; NEGATIVE GATE; RADIATION RESPONSE; RAMAN CHARACTERIZATION; RAMAN SPECTRA; SI SUBSTRATES; SWCNT-TFT; TOTAL IONIZING DOSE; TOTAL IONIZING DOSE EFFECTS; TRANSFER CHARACTERISTICS; ULTRACENTRIFUGATION;

CENTRIFUGATION; DRAIN CURRENT; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; GAS ADSORPTION; IONIZING RADIATION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM TRANSISTORS;

RADIATION EFFECTS;

EID: 78650403982     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2078515     Document Type: Conference Paper

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