Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

  Zheng, Zhi Wei ^a   Cheng, Chun Hu ^b   Chou, Kun I ^c   Liu, Ming ^a   Chin, Albert ^c  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CONDUCTION; CURRENT DISTRIBUTION; FLEXIBLE POLYIMIDE SUBSTRATE; FLEXIBLE SUBSTRATE; HIGH POTENTIAL; HIGH-RESISTANCE STATE; MEMORY APPLICATIONS; RESISTIVE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING POWER;

ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; OXYGEN VACANCIES; PHOTOELECTRONS; POLYIMIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM COMPOUNDS;

EID: 84871326659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772003     Document Type: Article

References (24)

1. C. Y. Tsai, T. H. Lee, A. Chin, H. Wang, C. H. Cheng, and F. S. Yeh, Tech. Dig.-Int. Electron Devices Meet. 2010, 110. 10.1109/IEDM.2010.5703302
2. A. Chin, C. C. Laio, C. Chen, K. C. Chiang, D. S. Yu, W. J. Yoo, G. S. Samudra, T. Wang, I. J. Hsieh, S. P. McAlister, and C. C. Chi, Tech. Dig.-Int. Electron Devices Meet. 2005, 158. 10.1109/IEDM.2005.1609294
3. See www.itrs.net for International Technology Roadmap for Semiconductors (ITRS), 2011 (Online).
4. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, Tech. Dig.-Int. Electron Devices Meet. 2007, 775. 10.1109/IEDM.2007.4419062
5. C. Yoshida, K. Tsunoda, H. Noshiro, and Y. Sugiyama, Appl. Phys. Lett. 91, 223510 (2007). 10.1063/1.2818691
6. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 92, 232112 (2008). 10.1063/1.2945278
7. N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, Tech. Dig.-Symp. on VLSI Tech. 2008, 100. 10.1109/VLSIT.2008.4588578
8. H. S. Yoon, I. G. Baek, J. Zhao, H. Sim, M. Y. Park, H. Lee, G. H. Oh, J. C. Shin, I. S. Yeo, and U. I. Chung, Tech. Dig.-Symp. on VLSI Tech. 2009, 26.
9. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, and T. P. Ma, IEEE Electron Device Lett. 30, 334 (2009). 10.1109/LED.2009.2014256
10. Q. Liu, S. Long, W. Wang, Q. Zuo, S. Zhang, J. Chen, and M. Liu, IEEE Electron Device Lett. 30, 1335 (2009). 10.1109/LED.2009.2032566
11. B. Gao, B. Sun, H. Zhang, L. Liu, X. Liu, R. Han, J. Kang, and B. Yu, IEEE Electron Device Lett. 30, 1326 (2009). 10.1109/LED.2009.2032308
12. M. Jo, D. J. Seong, S. Kim, J. Lee, W. Lee, J. B. Park, S. Park, S. Jung, J. Shin, D. Lee, and H. Hwang, Tech. Dig.-Symp. on VLSI Tech. 2010, 53. 10.1109/VLSIT.2010.5556121
13. C. H. Cheng, A. Chin, and F. S. Yeh, Tech. Dig.-Int. Electron Devices Meet. 2010, 448. 10.1109/IEDM.2010.5703392
14. C. H. Cheng, A. Chin, and F. S. Yeh, Adv. Mater. 23, 902 (2011). 10.1002/adma.201002946
15. C. H. Cheng, A. Chin, and F. S. Yeh, Appl. Phys. Lett. 98, 052905 (2011). 10.1063/1.3549689
16. C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, and A. Chin, IEEE Electron Device Lett. 32, 1749 (2011). 10.1109/LED.2011.2168939
17. W. Kim, S. I. Park, Z. Zhang, Y. L. Young, D. Sekar, H.-S. Philip Wong, and S. Simon Wong, Tech. Dig.-Symp. on VLSI Tech. 2011, 22.
18. A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, and A. Chin, Appl. Phys. Lett. 100, 243506 (2012). 10.1063/1.4729589
19. A. Chin, K. Lee, B. C. Lin, and S. Horng, Appl. Phys. Lett. 69, 653 (1996). 10.1063/1.117795
20. K. C. Chiang, C. C. Huang, A. Chin, W. J. Chen, H. L. Kao, M. Hong, and J. Kwo, Tech. Dig.-Symp. on VLSI Tech. 2006, 102. 10.1109/VLSIT.2006.1705237
21. K. C. Chiang, C. H. Cheng, H. C. Pan, C. N. Hsiao, C. P. Chou, A. Chin, and H. L. Hwang, IEEE Electron Device Lett. 28, 235 (2007). 10.1109/LED.2007. 891265
22. M. Sowinska, T. Bertaud, D. Walczyk, S. Thiess, M. A. Schubert, M. Lukosius, W. Drube, Ch. Walczyk, and T. Schroeder, Appl. Phys. Lett. 100, 233509 (2012). 10.1063/1.4728118
23. T. Bertaud, M. Sowinska, D. Walczyk, S. Thiess, A. Gloskovskii, Ch. Walczyk, and T. Schroeder, Appl. Phys. Lett. 101, 143501 (2012). 10.1063/1.4756897
24. H. Akinaga and H. Shima, Proc. IEEE 98, 2237 (2010). 10.1109/JPROC.2010. 2070830