Novel cross-point resistive switching memory with self-formed Schottky barrier

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 53-54

  Jo, Minseok ^a   Seong, Dong Jun ^a   Kim, Seonghyun ^a   Lee, Joonmyoung ^a   Lee, Wootae ^a   Park, Ju Bong ^a   Park, Sangsoo ^a   Jung, Seungjae ^a   Shin, Jungho ^a   Lee, Daeseok ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MEMORY ARRAY; PROCESS STEPS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SCHOTTKY BARRIERS;

REDOX REACTIONS; SWITCHING SYSTEMS;

SCHOTTKY BARRIER DIODES;

EID: 77957870044     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556121     Document Type: Conference Paper

References (6)

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4. D. Seong et al., IEDMTech. Dig. p.101, 2009.
5. Y.B. Nian et al., Phys. Rev. Lett. 98, 146403, 2007.
6. S.M. Sze, Physics of Semiconductors Devices, JOHNWILEY & SONS, New York, 1981.