Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

  Dasgupta, Sandeepan ^a   Biedermann, Laura B ^a   Sun, Min ^b   Kaplar, Robert ^a   Marinella, Matthew ^a   Zavadil, Kevin R ^a   Atcitty, Stan ^a   Palacios, Tomas ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; BARRIER STRUCTURES; CURRENT COLLAPSE; DE-TRAPPING; EPITAXIAL STRUCTURE; GAN BUFFER; KELVIN FORCE MICROSCOPY; OPERATING VOLTAGE; SIMULTANEOUS MEASUREMENT; SURFACE PASSIVATION; TRAPPED CHARGE;

ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

SURFACE POTENTIAL;

EID: 84871318669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772503     Document Type: Article

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