Laser-silicon interaction for selective emitter formation in photovoltaics. II. Model applications

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Blecher, J J ^a   Palmer, T A ^a   Reutzel, E W ^a   Debroy, T ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONSERVATION OF MASS; DOPANT CONCENTRATIONS; DOPANT PROFILE; HIGH-EFFICIENCY SOLAR CELLS; LASER DOPING; LASER POWER; MODEL APPLICATION; MOLTEN ZONES; OUTPUT POWER; PHOTOVOLTAICS; POWER LEVELS; PROCESS MAPS; PROCESSING PARAMETERS; RESISTANCE VALUES; SELECTIVE EMITTERS; TRAVEL SPEED;

ASPECT RATIO; GEOMETRY; LASERS; MATHEMATICAL MODELS; PHOSPHORUS; SEMICONDUCTOR DOPING; ZONE MELTING;

SHEET RESISTANCE;

EID: 84871195108     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768540     Document Type: Article

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