18.5% laser-doped solar cell on CZ p-type silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 689-694

  Sugianto, Adeline ^a   Bovatsek, Jim ^b   Wenham, Stuart ^a   Tjahjono, Budi ^a   Xu, Guangqi ^a   Yao, Yu ^a   Hallam, Brett ^a   Bai, Xue ^a   Kuepper, Nicole ^a   Chong, Chee Mun ^a   Patel, Raj ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Spectra Physics Lasers Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; FILL FACTOR; FORMING METALS; HEAVY DOPING; HIGH YIELD; IDEALITY FACTORS; LABORATORY PROCESS; LASER DOPING; LASER PARAMETERS; LASER SCANS; LASER-INDUCED DAMAGE; METAL CONTACTS; P-TYPE SILICON; PROCESSING CONDITION; PRODUCTION ENVIRONMENTS; SCREEN-PRINTED; SELECTIVE EMITTERS;

ELECTRIC RESISTANCE; OHMIC CONTACTS; PHOTOVOLTAIC EFFECTS;

DOPING (ADDITIVES);

EID: 78650110237     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616914     Document Type: Conference Paper

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