Laser-doping technique using ultraviolet laser for shallow doping in crystalline silicon solar cell fabrication

Japanese Journal of Applied Physics

Volumn 48, Issue 7 PART 1, 2009, Pages

  Ogane, Akiyoshi ^a   Hirata, Kenji ^a   Horiuchi, Koyo ^a   Nishihara, Yoshiyuki ^a   Takahashi, Yu ^a   Kitiyanan, Athapol ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SURFACE FIELDS; CARBON ATOMS; CRYSTALLINE SILICON SOLAR CELLS; DOPING CONCENTRATION; DOPING TECHNIQUES; FILL FACTOR; HIGH EFFICIENCY; HIGH-SHEET-RESISTANCE; LASER OUTPUT POWER; PHOTOVOLTAIC PERFORMANCE; PHOTOVOLTAIC PROPERTY; ROOM TEMPERATURE; SILICON SURFACES; ULTRAVIOLET LASER; UV WAVELENGTH;

BORON; ELECTRIC RESISTANCE; FABRICATION; LASERS; OPEN CIRCUIT VOLTAGE; OXYGEN; PHOSPHORUS; SILICON SOLAR CELLS; SOLAR CELLS;

DOPING (ADDITIVES);

EID: 72049098456     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.071201     Document Type: Article

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