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Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

(6) Ando, Y a Yamada, S a Kasahara, K a Sawano, K b Miyao, M a Hamaya, K a,c

a KYUSHU UNIVERSITY (Japan)

b TOKYO CITY UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC CONTACTS; HANLE EFFECTS; SI DEVICES; SPIN LIFETIMES; SPIN TRANSPORT; SPIN-ACCUMULATIONS; SPINTRONIC DEVICE;

SILICON;

MAGNETIC STRUCTURE;

EID: 84870889476 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4769221 Document Type: Article

Times cited : (6)

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