Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

  Ando, Y ^a   Kasahara, K ^a   Yamane, K ^a   Baba, Y ^a   Maeda, Y ^a   Hoshi, Y ^b   Sawano, K ^b   Miyao, M ^a   Hamaya, K ^a,c  

^a KYUSHU UNIVERSITY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DEPENDENCE; DETECTABILITY; DEVICE STRUCTURES; ELECTRICAL DETECTION; FORWARD BIAS; HANLE EFFECTS; LATERAL DEVICE; SCHOTTKY; SILICON CHANNEL; SPIN-ACCUMULATIONS; SPIN-POLARIZED ELECTRONS; TUNNEL CONTACTS;

SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960488784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3607480     Document Type: Article

References (19)

1. X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrm, and P. A. Crowell, Phys. Rev. Lett. 96, 176603 (2006). 10.1103/PhysRevLett.96.176603 (Pubitemid 43668104)
2. I. Appelbaum, B. Huang, and D. J. Monsma, Nature 447, 295 (2007) 10.1038/nature05803 (Pubitemid 46788838)
3. H. Jang and I. Appelbaum, Phys. Rev. Lett. 103, 117202 (2009). 10.1103/PhysRevLett.103.117202
4. M. Tran, H. Jaffrés, C. Deranlot, J.-M. George, A. Fert, A. Miard, and A. Lematre, Phys. Rev. Lett. 102, 036601 (2009). 10.1103/PhysRevLett.102. 036601
5. S. P. Dash, S. Sharma, R. S. Patel1, M. P. Jong, and R. Jansen, Nature (London) 462, 491 (2009) 10.1038/nature08570
6. S. P. Dash, S. Sharma, J. C. Le Breton, and R. Jansen, Proc. SPIE 7760, 77600J (2010). 10.1117/12.860150
7. T. Sasaki, T. Oikawa, M. Shiraishi, Y. Suzuki, and K. Noguchi, Appl. Phys. Lett. 98, 012508 (2011). 10.1063/1.3536488
8. S. A. Crooker, M. Furis, X. Lou, C. Adelmann, D. L. Smith, C. J. Palmstrm, and P. A. Crowell, Science 309, 2191 (2005). 10.1126/science.1116865 (Pubitemid 41396064)
9. X. Lou, C. Adelmann, S. A. Crooker, E. S. Garlid, J. Zhang, S. M. Reddy, S. D. Flexner, C. J. Palmstrm, and P. A. Crowell, Nat. Phys. 3, 197 (2007). 10.1038/nphys543
10. M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstrm, and P. A. Crowell, Phys. Rev. B 80, 161206(R) (2009). 10.1103/PhysRevB.80.161206
11. S. Sugahara and M. Tanaka, Appl. Phys. Lett. 84, 2307 (2004). 10.1063/1.1689403
12. Y. Maeda, K. Hamaya, S. Yamada, Y. Ando, K. Yamane, and M. Miyao, Appl. Phys. Lett. 97, 192501 (2010). 10.1063/1.3514580
13. G. L. Pearson and J. Bardeen, Phys. Rev. 75, 865 (1949). 10.1103/PhysRev.75.865
14. F. J. Morin and J. P. Maita, Phys. Rev. 96, 28 (1954). 10.1103/PhysRev.96.28
15. Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 94, 182105 (2009) 10.1063/1.3130211
16. K. Hamaya, Y. Ando, T. Sadoh, and M. Miyao, Jpn. J. Appl. Phys. 50, 010101 (2011). 10.1143/JJAP.50.010101
17. Y. Song and H. Dery, Phys. Rev. B 81, 045321 (2010). 10.1103/PhysRevB.81. 045321
18. A. T. Hanbicki, O. M. J. vanft Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 82, 4092 (2003). 10.1063/1.1580631
19. If we use the values of the spin diffusion length and conductivity of the heavily doped Si (Ref. 5), the estimated spin polarization can easily become more than 1.0, inconsistent with the bulk spin polarization of CoFe electrodes.