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Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

(6) Maeda, Y a Hamaya, K a,b Yamada, S a Ando, Y a Yamane, K a Miyao, M a

a KYUSHU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SAMPLES; COFE ALLOYS; HETEROSTRUCTURES; HIGH QUALITY; LOW TEMPERATURES; PINNING EFFECTS; SCHOTTKY BARRIER HEIGHTS; SI-BASED; SILICIDATION; SPINTRONICS;

CRYSTALS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SATURATION MAGNETIZATION; SCHOTTKY BARRIER DIODES; SILICON; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78249249992 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3514580 Document Type: Article

Times cited : (27)

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