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Volumn 2, Issue , 2006, Pages 847-852
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Parasitic inductance effects on the switching loss measurement of power semiconductor devices
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE FILTERS;
ELECTRIC CONDUCTIVITY;
INDUCTANCE;
INDUSTRIAL ELECTRONICS;
INSULATED GATE BIPOLAR TRANSISTORS (IGBT);
POWER CONVERTERS;
POWER ELECTRONICS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR SWITCHES;
CIRCUIT OPERATIONS;
GATE DRIVE CIRCUITS;
INTERNATIONAL SYMPOSIUM;
LOOP INDUCTANCE;
PARASITIC INDUCTANCES;
POWER CIRCUITS;
POWER SEMICONDUCTOR DEVICES;
SWITCHING LOSSES;
SWITCHING POWER;
TURN-OFF;
ELECTRIC NETWORK ANALYSIS;
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EID: 53649091875
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISIE.2006.295745 Document Type: Conference Paper |
Times cited : (47)
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References (6)
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