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Volumn , Issue , 2010, Pages 1119-1123

Switching loss analysis of closed-loop gate drive

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS RESULTS; CLOSED-LOOP; CONTROLLED SWITCHING; CURRENT OVERSHOOT; ENERGY LOSS; GATE DRIVES; REAL APPLICATIONS; SWITCHING LOSS; VOLTAGE OVERSHOOT; WAVE FORMS;

EID: 77952131696     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2010.5433363     Document Type: Conference Paper
Times cited : (13)

References (13)
  • 4
    • 0026136708 scopus 로고
    • An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)
    • April
    • A. R. Hefner, Jr., "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Trans. on Power Electronics, vol. 6, issue 2, April 1991 pp. 208-219.
    • (1991) IEEE Trans. on Power Electronics , vol.6 , Issue.2 , pp. 208-219
    • Hefner Jr., A.R.1
  • 5
    • 66349134170 scopus 로고    scopus 로고
    • An optimum drive and clamp circuit design with controlled switching for a snubberless PWM-VSI-IGBT inverter leg
    • F. Blaabjerg and J. K. Pederson, "An optimum drive and clamp circuit design with controlled switching for a snubberless PWM-VSI-IGBT inverter leg," in Proc. IEEE PESC'92, 1992, pp. 289-297.
    • Proc. IEEE PESC'92, 1992 , pp. 289-297
    • Blaabjerg, F.1    Pederson, J.K.2
  • 6
    • 0027881954 scopus 로고    scopus 로고
    • Optimization of the turn-off performance of IGBT at over-current and short-circuit current
    • H. G. Eckel and L. Sack, "Optimization of the turn-off performance of IGBT at over-current and short-circuit current," in Proc. EPE'93, 1993, pp. 317-322.
    • Proc. EPE'93, 1993 , pp. 317-322
    • Eckel, H.G.1    Sack, L.2
  • 7
    • 0029747818 scopus 로고    scopus 로고
    • High performance gate drives utilizing the IGBT in the active region
    • A. N. Githiari, R. J. Leedham, and P. R. Palmer, "High performance gate drives utilizing the IGBT in the active region," in Proc. IEEE PESC'96, 1996, pp. 1754-1759.
    • Proc. IEEE PESC'96, 1996 , pp. 1754-1759
    • Githiari, A.N.1    Leedham, R.J.2    Palmer, P.R.3
  • 10
    • 0033184211 scopus 로고    scopus 로고
    • High performance active gate drive for high power IGBTs
    • Sept./Oct.
    • V. John, B. Suh and T.A. Lipo, "High performance active gate drive for high power IGBTs," IEEE Trans. Industry Appl., VOL. 35, NO. 5, Sept./Oct. 1999.pp.1108-1117.
    • (1999) IEEE Trans. Industry Appl. , vol.35 , Issue.5 , pp. 1108-1117
    • John, V.1    Suh, B.2    Lipo, T.A.3
  • 11
    • 0029779505 scopus 로고    scopus 로고
    • Gate-controlled dv/dt and di/dt limitation in high power IGBT converters
    • January
    • C. Gerster and P. Hofer, "Gate-controlled dv/dt and di/dt limitation in high power IGBT converters," EPE Journal, Vol. 5, no 3/4, January 1996, page 11-16.
    • (1996) EPE Journal , vol.5 , Issue.3-4 , pp. 11-16
    • Gerster, C.1    Hofer, P.2
  • 12
    • 3843094960 scopus 로고    scopus 로고
    • Active voltage control of IGBTs for high power applications
    • Jul.
    • P. R. Palmer and H. S. Rajamani, "Active voltage control of IGBTs for high power applications," IEEE Trans. Power Electron., vol. 19, no. 4, pp. 894-901, Jul. 2004.
    • (2004) IEEE Trans. Power Electron. , vol.19 , Issue.4 , pp. 894-901
    • Palmer, P.R.1    Rajamani, H.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.