Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4

Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

  Beeler, R T ^a   Xu, Chi ^a   Smith, D J ^a   Grzybowski, G ^a   Menendez J ^a   Kouvetakis, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; COMPOSITIONAL DEPENDENCE; DEFECT-FREE; DIRECT BAND GAP; IV CHARACTERISTICS; LATTICE-MATCHED; LOW TEMPERATURES; P-I-N PHOTODETECTORS; RESPONSIVITY MEASUREMENTS; SINGLE WAFER;

CERIUM ALLOYS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTONS; SILICON; TEMPERATURE; TIN; TIN ALLOYS;

GERMANIUM;

EID: 84870526392     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768217     Document Type: Article

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