Dark current mechanism in bulk GaInNAs lattice matched to GaAs

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 103-106

  Tan, Lionel J J ^a,b   Soong, Wai Mun ^a,c   David, John P R ^a   Ng, Jo Shien ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Indira Gandhi Centre for Atomic Research   (India)

^c MIMOS Berhad ^*  (Malaysia)

Author keywords

Dark currents; dilute nitrides; GaAs; photodiodes

Indexed keywords

BAND GAPS; CURRENT MECHANISMS; DILUTE NITRIDES; EXPONENTIAL DEPENDENCE; GAAS; GAINNAS; GENERATION-RECOMBINATION; LATTICE-MATCHED; LOW BIAS; LOW TEMPERATURES; POOLE-FRENKEL EFFECT; REVERSE-BIAS; TUNNELING CURRENT;

ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM NITRIDE; PHOTODIODES; SEMICONDUCTING GALLIUM;

DARK CURRENTS;

EID: 78650917511     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2086061     Document Type: Article

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