GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms

IEEE Journal of Photovoltaics

Volumn 2, Issue 4, 2012, Pages 434-440

  Beeler, Richard T ^a   Smith, David J ^a   Kouvetakis, John ^a   Menéndez, José ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Photovoltaic cells; semiconductor diodes; semiconductor films; silicon compounds

Indexed keywords

ABSORPTION EDGES; COLLECTION EFFICIENCY; CRYSTAL QUALITIES; DIFFUSION COMPONENTS; GE SUBSTRATES; GE(100); IDEALITY FACTORS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL GAP; PHOTOVOLTAIC MATERIALS; PROTOTYPE DEVICES; QUANTUM EFFICIENCY MEASUREMENTS; SEMICONDUCTOR FILMS; SI(1 0 0); TARGET COMPOSITION; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION; DIODES; ELECTRIC PROPERTIES; GERMANIUM; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DIODES; SILICON; SILICON COMPOUNDS; TIN; TIN ALLOYS;

SEMICONDUCTING SILICON;

EID: 84866734921     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2206568     Document Type: Article

References (29)

1. A. Marti and G. L. Araujo, "Limiting efficiencies for photovoltaic energy conversion in multigap systems, " Solar Energy Mater. Solar Cells, vol. 43, pp. 203-222, 1996. (Pubitemid 126401066)
2. D. J. Friedman, S. R. Kurtz, and J. F. Geisz, "Analysis of the GaInP/GaAs/1-eV/Ge cell and related structures for terrestrial concentrator application, " in Proc. 29th IEEE Photovolt. Spec. Conf., 2002, pp. 856-859.
3. S. H. Wei and A. Zunger, "Giant and composition-dependent optical bowing coefficient in GaAsN alloys, " Phys. Rev. Lett., vol. 76, pp. 664-667, 1996. (Pubitemid 126639491)
4. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, "40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells, " Appl. Phys. Lett., vol. 90, pp. 183516-1-183516-3, 2007.
5. J. F. Geisz, S. Kurtz, M. W. Wanlass, J. S. Ward, A. Duda, D. J. Friedman, J. M. Olson, W. E. McMahon, T. E. Moriarty, and J. T. Kiehl, "High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction, " Appl. Phys. Lett., vol. 91, pp. 023502-1-023502-3, 2007.
6. J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, and K. M. Jones, "40. 8% efficient inverted triple-junction solar cell with two independently metamorphic junctions, " Appl. Phys. Lett., vol. 93, pp. 123505-1-123505-3, 2008.
7. W. Guter, J. Scḧone, S. P. Philipps, M. Steiner, G. Siefer, A. Wekkeli, E. Welser, E. Oliva, A. W. Bett, and F. Dimroth, "Current-matched triplejunction solar cell reaching 41. 1% conversion efficiency under concentrated sunlight, " Appl. Phys. Lett., vol. 94, pp. 223504-1-223504-3, 2009.
8. S. Wojtczuk, P. Chiu, Z. Xuebing, D. Derkacs, C. Harris, D. Pulver, and M. Timmons, "InGaP/GaAs/InGaAs 41% concentrator cells using bi-facial epigrowth, " in Proc. 35th IEEE Photovolt. Spec. Conf., 2010, pp. 001259-001264.
9. M. Bauer, C. Ritter, P. A. Crozier, J. Ren, J. Meńendez, G. Wolf, and J. Kouvetakis, "Synthesis of ternary SiGeSn semiconductors on Si(100) via Snx Ge1x buffer layers, " Appl. Phys. Lett., vol. 83, pp. 2163-2165, Sep. 15, 2003.
10. V. R. D'Costa, Y. Y. Fang, J. Tolle, J. Kouvetakis, and J. Menendez, "Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys, " Phys. Rev. Lett., vol. 102, pp. 107403-1-107403-4, 2009.
11. J. Xie, J. Tolle, V. R. D'Costa, A. V. G. Chizmeshya, J. Meńendez, and J. Kouvetakis, "Direct integration of active Ge1?x (Si4 Sn)x semiconductors on Si(100), " Appl. Phys. Lett., vol. 95, pp. 181909-1-181909-3, 2009.
12. J. Xie, A. V. G. Chizmeshya, J. Tolle, V. R. D'Costa, J. Menendez, and J. Kouvetakis, "Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms, " Chem. Mater., vol. 22, pp. 3779-3789, 2010.
13. Y. Y. Fang, J. Tolle, A. V. G. Chizmeshya, J. Kouvetakis, V. R. D'Costa, and J. Menendez, "Practical B and P doping via Six Sny Ge1xyzMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior, " Appl. Phys. Lett., vol. 95, pp. 081113-1-081113-3, Aug. 24, 2009.
14. L. R. Doolittle, "Algorithms for the rapid simulation of Rutherford backscattering spectra, " Nucl. Instrum. Methods Phys. Res. B: Beam Interactions Mater. Atoms, vol. 9, pp. 344-351, 1985.
15. Y. Y. Fang, J. Tolle, J. Tice, A. V. G. Chizmeshya, J. Kouvetakis, V. R. D'Costa, and J. Meńendez, "Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry, " Chem. Mater., vol. 19, pp. 5190-5925, 2007.
16. E. Koppensteiner, A. Schuh, G. Bauer, V. Holy, G. P. Watson, and E. A. Fitzgerald, "Determination of threading dislocation density in heteroepitaxial layers by diffuse X-ray scattering, " J. Phys. D: Appl. Phys., vol. 28, pp. A114-A119, 1995.
17. L. Shao and M. Nastasi, "Methods for the accurate analysis of channeling Rutherford backscattering spectrometry, " Appl. Phys. Lett., vol. 87, pp. 064103-1-064103-3, 2005.
18. R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, "High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn materials integrated on silicon, " IEEE J. Quantum Electron., vol. 47, no. 2, pp. 213-222, Feb. 2011.
19. R. Roucka, R. Beeler, J. Mathews, M.-Y. Ryu, Y. K. Yeo, J. Meńendez, and J. Kouvetakis, "Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100), " J. Appl. Phys., vol. 109, pp. 103115-1-103115-9, 2011.
20. S. C. Jain andD. J. Roulston, "A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and Gex Si1x strained layers, " Solid-State Electron., vol. 34, pp. 453-465, 1991. (Pubitemid 21701058)
21. A. J. Ptak, D. J. Friedman, S. Kurtz, and R. C. Reedy, "Low-acceptorconcentration GaInNAs grown by molecular-beam epitaxy for highcurrent p-i-n solar cell applications, " J. Appl. Phys., vol. 98, pp. 094501-1-094501-5, 2005.
22. J. Wang, W. Y. Loh, H. Zang, M. B. Yu, K. T. Chua, T. H. Loh, J. D. Ye, R. Yang, X. L. Wang, S. J. Lee, B. J. Cho, G. Q. Lo, and D. L. Kwong, "Integration of tensile-strained Ge p-i-n photodetector on advancedCMOS platform, " in Proc. 4th IEEE Int. Conf. Group IV Photon., 2007, pp. 1-3.
23. L. Colace, M. Balbi, V. Sorianello, and G. Assanto, " Temperaturedependence ofGe on Si p-i-n photodetectors, " J. Lightw. Technol., vol. 26, no. 14, pp. 2211-2214, Jul. 2008.
24. M. Balbi, V. Sorianello, L. Colace, and G. Assanto, "Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors, " Physica E, vol. 41, pp. 1086-1089, 2009.
25. E. Rosencher and B. Vinter, Optoelectronics. Cambridge, U. K. : Cambridge Univ. Press, 2002.
26. V. R. D'Costa, C. S. Cook, A. G. Birdwell, C. L. Littler, M. Canonico, S. Zollner, J. Kouvetakis, and J. Menendez, "Optical critical points of thin-film Ge1?y Sny alloys: A comparative Ge1?y Sny/Ge1?x Six study, " Phys. Rev. B, vol. 73, pp. 125207-1-125207-16, 2006.
27. J. Weber and M. I. Alonso, "Near-band-gap photoluminescence of Si-Ge alloys, " Phys. Rev. B, vol. 40, pp. 5683-5693, 1989.
28. M. L. Cohen and J. R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, vol. 75. Berlin, Germany: Springer, 1989.
29. K.-W. Ang, J. W. Ng, G.-Q. Lo, and D.-L. Kwong, "Impact of fieldenhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector, " Appl. Phys. Lett., vol. 94, pp. 223515-1-223515-3, 2009.