Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 807-821

  Kouvetakis, J ^a   Tolle, J ^a   Roucka, R ^a   D'Costa, V R ^a   Fang, Y Y ^a   Chizmeshya, A V G ^a   Menendez, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GERMANIUM COMPOUNDS; QUANTUM CASCADE LASERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEMPERATURE; TIN ALLOYS;

ALLOY SCATTERING; DEVICE FABRICATIONS; HIGH-EFFICIENCY SOLAR CELLS; LOW TEMPERATURE CVD; MOLECULAR SOURCES; PROTOTYPE DEVICES; SELECTIVE GROWTH; SN CONCENTRATION;

SI-GE ALLOYS;

EID: 63149129162     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986840     Document Type: Conference Paper

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