Effect of doping on the Raman scattering of 6H-SiC crystals

Physica B: Condensed Matter

Volumn 405, Issue 10, 2010, Pages 2423-2426

  Li, Xiang Biao ^a   Chen, Zhi Zhan ^a   Shi, Er Wei ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Doping; Raman scattering; Silicon carbide crystal

Indexed keywords

DOPED SAMPLE; DOPING CONCENTRATION; DOPING LEVELS; EFFECT OF DOPING; FIRST-ORDER; HIGHER FREQUENCIES; LONGITUDINAL OPTICAL MODES; N-DOPED; RAMAN SPECTRA; SECOND ORDERS; SILICON CARBIDE CRYSTALS;

ALUMINUM; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SILICON CARBIDE;

DOPING (ADDITIVES);

EID: 77950595635     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.02.058     Document Type: Article

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