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Volumn 23, Issue 2, 2008, Pages 238-242
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Temperature-dependent raman property of Al-doped 6H-SiC crystals
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Author keywords
Doping; Free carrier; High temperature Raman spectra; SiC crystals
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Indexed keywords
ALUMINUM;
CARRIER CONCENTRATION;
CRYSTAL GROWTH;
DOPING (ADDITIVES);
RAMAN SCATTERING;
SEMICONDUCTOR MATERIALS;
FREE CARRIER;
PHYSICAL VAPOR TRANSPORT (PVT);
RAMAN SPECTRA;
SILICON CARBIDE;
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EID: 42049091249
PISSN: 1000324X
EISSN: None
Source Type: Journal
DOI: 10.3724/SP.J.1077.2008.00238 Document Type: Article |
Times cited : (8)
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References (20)
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