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Volumn 23, Issue 2, 2008, Pages 238-242

Temperature-dependent raman property of Al-doped 6H-SiC crystals

Author keywords

Doping; Free carrier; High temperature Raman spectra; SiC crystals

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL GROWTH; DOPING (ADDITIVES); RAMAN SCATTERING; SEMICONDUCTOR MATERIALS;

EID: 42049091249     PISSN: 1000324X     EISSN: None     Source Type: Journal    
DOI: 10.3724/SP.J.1077.2008.00238     Document Type: Article
Times cited : (8)

References (20)
  • 4
    • 42049097763 scopus 로고    scopus 로고
    • Chinese source


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.