Observation of polytype stability in different-impurities-doped 6H-SiC crystals

Diamond and Related Materials

Volumn 20, Issue 4, 2011, Pages 516-519

  Lin, Shenghuang ^a   Chen, Zhiming ^a   Feng, Xianfeng ^a   Yang, Ying ^a   Li, Lianbi ^a   Wang, Zhiqiang ^a   Pan, Pan ^a   Wan, Jun ^a   Wang, Huanhuan ^a   Ba, Yintu ^a   Ma, Yuan ^a   Li, Qingmin ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

6H SiC; Co doping; Polytype; Raman spectra

Indexed keywords

6H-SIC; CO-DOPED; CO-DOPING; CRYSTAL GROWTH PROCESS; HIGH-NITROGEN; N-DOPED; PHYSICAL VAPOR TRANSPORT; POLYTYPE; POLYTYPE STABILITY; POLYTYPES; RAMAN SPECTRA; X-RAY PHOTOELECTRON SPECTROSCOPE; XPS; XRD;

ALUMINUM; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; CRYSTALLIZATION; DOPING (ADDITIVES); PHOTOELECTRON SPECTROSCOPY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STABILITY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SILICON CARBIDE;

EID: 79952457096     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.02.011     Document Type: Article

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