Qualitative study of beta silicon carbide residual stress by Raman spectroscopy

Thin Solid Films

Volumn 377-378, Issue , 2000, Pages 389-393

  Lu, Y M ^a   Leu, I C ^b  

^a KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

^b Dept Mat Sci Eng Natl Cheng K   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GRAPHITE; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

MONOCHROMATIC OPTICAL WAVES;

SILICON CARBIDE;

EID: 18844471190     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01313-4     Document Type: Article

References (17)

1. Kittel C. Introduction to Solid State Physics. fourth ed :1971;163 Wiley, Canada.
2. Anastassakis E., Pinczuk A., Burstein E., Pollak F.H., Cardona M. Solid State Commun. 8:1970;133.
3. Anastassakis E. J. Raman Spectrosc. 10:1981;64.
4. Weinstein B.A., Piemarini G.J. Phys. Rev. B. 12:1975;1172.
5. Cerdeira F., Buchenauer C.J., Pollek F.H., Cardona M. Phys. Rev. B. 5:1972;580.
6. Rodriguez S., Fisher P., Fernando B. Phys. Rev. B. 5:1972;2219.
7. Harker Y.D., She C.Y., Edwards D.F. Appl. Phys. Lett. 15:1969;272.
8. Harker Y.D., She C.Y., Edwards D.F. Appl. Phys. Lett. 41:1970;5274.
9. Tekippe V.J., Ramades A.K., Rodriguez S. Phys. Rev. B. 8:1973;706.
10. Patrick L., Choyke W.J. Phys. Rev. 123:1961;813.
11. Noyan I.C., Cohen J.B. Kula E., Weiss V. The Nature of Residual Stresses and its Measurement, Residual Stresses and Stress Relaxation. 1982;17 Plenum, New York.
12. Price R.J. Am. Ceram. Soc. Bull. 48:(9):1969;859.
13. Olego D., Cardona M. Phys. Rev. B. 25:1982;1151.
14. Y.M. Lu, I.C. Leu, Surf. Coat. Technol. (2000) in press.
15. Chu C.H., Lu Y.M., Hon M.H., Lin W.Y. Chinese J. Mater. Sci. 23:1991;115.
16. Lu Y.M., Hon M.H. Mater. Sci. Eng. B. 8:1991;241.
17. Hoffman R.W. Thin Solid films. 34:1976;185.