SCOPUS 정보 검색 플랫폼

International Journal of Materials Research

Volumn 101, Issue 12, 2010, Pages 1514-1518

A technique for diameter enlargement in SiC crystal growth

(8) Lin, Shenghuang a Chen, Zhiming a Jiang, Dong a Liang, Peng a Wan, Jun a Liu, Bo a Xie, Huajie a Feng, Xianfeng a

a XI'AN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Diameter; Diameter enlargement; Platform; PVT; SiC

Indexed keywords

DIAMETER; DIAMETER ENLARGEMENT; PLATFORM; PVT; SIC;

CRUCIBLES; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; CYLINDERS (SHAPES); GRAPHITE; SINGLE CRYSTALS; WALLS (STRUCTURAL PARTITIONS); X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 78650472958 PISSN: 18625282 EISSN: None Source Type: Journal
DOI: 10.3139/146.110432 Document Type: Article

Times cited : (7)

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