The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H-SiC

Journal of Alloys and Compounds

Volumn 489, Issue 1, 2010, Pages 56-58

  Lin, Shenghuang ^a   Chen, Zhiming ^a   Liang, Peng ^a   Jiang, Dong ^a   Xie, Huajie ^a   Yang, Ying ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Mapping; Semi insulating (SI) SiC; Sheet resistance; Surface capacitance; Vanadium

Indexed keywords

ABSORPTION COEFFICIENTS; COMPLEX SURFACE; DEEP DEFECTS; DOPED SAMPLE; HIGH-SHEET-RESISTANCE; IN-PHASE; NONHOMOGENEITY; RESISTANCE VARIATIONS; SEMI-INSULATING; SEMI-INSULATING (SI) SIC; SIC SUBSTRATES; SURFACE CAPACITANCE;

CAPACITANCE; CRYSTALLIZATION; ELECTRIC RESISTANCE; MAPPING; SHEET RESISTANCE; SILICON CARBIDE; SUBSTRATES; SURFACE TOPOGRAPHY; VANADIUM ALLOYS;

SURFACE RESISTANCE;

EID: 70649114403     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.07.070     Document Type: Article

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