Thin-film ZnO charge-trapping memory cell grown in a single ALD step

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1714-1716

  Oruc, Feyza B ^a   Cimen, Furkan ^a   Rizk, Ayman ^b   Ghaffari, Mohammad ^a   Nayfeh, Ammar ^b   Okyay, Ali K ^a  

^a BILKENT UNIVERSITY   (Turkey)

^b KHALIFA UNIVERSITY   (United Arab Emirates)

Author keywords

Atomic layer deposition (ALD); Flash memory; thin film transistor (TFT); ZnO

Indexed keywords

CHANNEL MATERIALS; CHARGE TRAPPING MEMORIES; GATE STACKS; MEMORY CELL; MEMORY EFFECTS; PHYSICS-BASED; SUBTHRESHOLD SLOPE; TCAD SIMULATION; THIN-FILM TRANSISTOR (TFTS); ZNO;

ATOMIC LAYER DEPOSITION; FLASH MEMORY; SEMICONDUCTOR STORAGE; THIN FILM DEVICES; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84870405864     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2219493     Document Type: Article

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