High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors

Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

  Kang, Il Suk ^a   Kim, Young Su ^a   Seo, Hyun Sang ^a   Son, Se Wan ^b   Yoon, Eun Ae ^b   Joo, Seung Ki ^b   Won Ahn, Chi ^a  

^a National Nano Fab Center (NNFC)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA RETENTION; ENVIRONMENTAL STABILITY; FLEXIBLE SUBSTRATE; HIGH-RELIABILITY; NANOFLOATING GATE MEMORY; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; PALLADIUM NANOCLUSTERS; PROGRAMMABLE MEMORY; ROOM TEMPERATURE; TOP-GATE; TRANSPARENT THIN FILM TRANSISTOR; TUNNELING OXIDES; WHOLE PROCESS;

NONVOLATILE STORAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79959385418     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3593096     Document Type: Article

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