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Volumn 30, Issue 6, 2012, Pages

Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AVERAGE GRAIN SIZE; CHANNEL THICKNESS; ELECTRICAL CHARACTERISTIC; P-TYPE; ROOT MEAN SQUARE ROUGHNESS; SHORT WAVELENGTHS; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTOR (TFTS); TRANSFER CURVES;

EID: 84870310281     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4764110     Document Type: Article
Times cited : (36)

References (23)
  • 3
    • 78650653090 scopus 로고    scopus 로고
    • 10.1063/1.3521310
    • S. Y. Sung, Appl. Phys. Lett. 97, 222109 (2010). 10.1063/1.3521310
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 222109
    • Sung, S.Y.1
  • 11
    • 80054705024 scopus 로고    scopus 로고
    • 10.1002/adma.201102232
    • R. Martins, Adv. Mater. 23, 4491 (2011). 10.1002/adma.201102232
    • (2011) Adv. Mater. , vol.23 , pp. 4491
    • Martins, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.