Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors

Surface and Coatings Technology

Volumn 205, Issue SUPPL. 1, 2010, Pages

  Woo, C H ^a   Kim, Y Y ^a   Kong, B H ^a   Cho, H K ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

InGaZnO; Oxide channel; Sputtering; Thin film transistor

Indexed keywords

ACTIVE LAYER; BOTTOM GATE; CHANNEL LAYERS; CURRENT RATIOS; DEVICE PERFORMANCE; ELECTRICAL RESISTIVITY; FIELD-EFFECT MOBILITIES; GATE BIAS; INGAZNO; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; SI SUBSTRATES; SMALL CHARGES; SUBTHRESHOLD SWING; THICK LAYERS;

ELECTRIC CONDUCTIVITY; SILICON COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 78649970566     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2010.07.036     Document Type: Article

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