Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al 2O 3 gate dielectric

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 552-554

  Wu, Chien Hung ^a   Chang, Kow Ming ^b,c   Huang, Sung Hung ^a   Deng, I Chung ^d   Wu, Chin Jyi ^e   Chiang, Wei Han ^e   Chang, Chia Chiang ^a  

^a CHUNG HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c I SHOU UNIVERSITY   (Taiwan)

^d TECHNOLOGY AND SCIENCE INSTITUTE OF NORTHERN TAIWAN   (Taiwan)

^e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Al 2O 3; atmospheric pressure plasma jet (APPJ); indium gallium zinc oxide (IGZO); nonvacuum; plasma enhanced atomic layer deposition (PE ALD)

Indexed keywords

ATMOSPHERIC PRESSURE PLASMA JET (APPJ); ATMOSPHERIC PRESSURE PLASMA JETS; CHANNEL MATERIALS; ELECTRICAL CHARACTERISTIC; INDIUM GALLIUM ZINC OXIDES (IGZO); INDIUM-GALLIUM-ZINC OXIDE (IGZO); NANOCRYSTALLINES; NONVACUUM; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SUBTHRESHOLD SWING;

ALUMINUM; GALLIUM; GATE DIELECTRICS; INDIUM; PLASMA JETS; PLASMA SOURCES; THIN FILM TRANSISTORS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84862816343     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2185774     Document Type: Article

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