Effect of vicinal substrates on the growth and device performance of quantum dot solar cells

Solar Energy Materials and Solar Cells

Volumn 108, Issue , 2013, Pages 256-262

  Hubbard, Seth M ^a   Podell, Adam ^a   MacKos, Chelsea ^a   Polly, Stephen ^a   Bailey, Christopher G ^a   Forbes, David V ^a  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Epitaxy; InAs; Quantum dot solar cell; Substrate misorientation

Indexed keywords

DEVICE PERFORMANCE; EFFECTIVE STRAIN; GAAS; GROUND STATE TRANSITION; GROWTH MECHANISMS; INAS; LOWER CRITICAL; MIS-ORIENTATION; MISORIENTATION ANGLE; ONE-SUN ILLUMINATION; QUANTUM DOT SOLAR CELLS; STRANSKI-KRASTANOV GROWTH; SUBSTRATE MISORIENTATION; SUBSTRATE TYPES; VICINAL SUBSTRATES;

COALESCENCE; EPITAXIAL GROWTH; INDIUM ARSENIDE; MONOLAYERS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

SUBSTRATES;

EID: 84870251734     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.09.026     Document Type: Conference Paper

References (37)

1. R.P. Raffaelle, S. Sinharoy, J. Andersen, D.M. Wilt, S.G. Bailey, Multi-junction solar cell spectral tuning with quantum dots, in: Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on, 2006, pp. 162-166, 10.1109/wcpec.2006.279407
2. A. Marti, N. Lopez, E. Antolin, E. Canovas, C. Stanley, C. Farmer, L. Cuadra, and A. Luque Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell Thin Solid Films 511-512 2006 638 644
3. S.M. Hubbard, C. Bailey, S. Polly, C. Cress, J. Andersen, D. Forbes, and R. Raffaelle Nanostructured photovoltaics for space power Journal of Nanophotonics 3 2009 031880 031816
4. A. Luque, and A. Marti Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Physical Review Letters 78 1997 5014 5017
5. Q. Shao, A.A. Balandin, A.I. Fedoseyev, and M. Turowski Intermediate-band solar cells based on quantum dot supracrystals Applied Physics Letters 91 2007 163503-1 163503-3
6. S.P. Bremner, M.Y. Levy, and C.B. Honsberg Limiting efficiency of an intermediate band solar cell under a terrestrial spectrum Applied Physics Letters 92 2008 171110 171113
7. A. Marti, E. Antolin, C.R. Stanley, C.D. Farmer, N. Lopez, P. Diaz, E. Canovas, and P.G.L.A. Luque Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell Physical Review Letters 97 2006 247701-1 247701-4
8. E. Antolin, A. Marti, C.D. Farmer, P.G. Linares, E. Hernandez, A.M. Sanchez, T. Ben, S.I. Molina, C.R. Stanley, and A. Luque Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell Journal of Applied Physics 108 2010 064513 064517
9. R. Strandberg, and T.W. Reenaas Photofilling of intermediate bands Journal of Applied Physics 105 2009 124512 124518
10. C.G. Bailey, D.V. Forbes, R.P. Raffaelle, and S.M. Hubbard Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells Applied Physics Letters 98 2011 163105-1 163105-3
11. Y. Okada, T. Morioka, K. Yoshida, R. Oshima, Y. Shoji, T. Inoue, and T. Kita Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell Journal of Applied Physics 109 2011 024301 024305
12. D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, and Y. Arakawa Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage Applied Physics Letters 96 2010 203507-1 203507-3
13. T. Sugaya, Y. Kamikawa, S. Furue, T. Amano, M. Mori, and S. Niki Multi-stacked quantum dot solar cells fabricated by intermittent deposition of InGaAs Solar Energy Materials and Solar Cells 95 2011 163 166
14. V. Popescu, G. Bester, M.C. Hanna, A.G. Norman, and A. Zunger Theoretical and experimental examination of the intermediate-band concept for strain-balaned (In,Ga)As/Ga(As,P) quantum dot solar cells Physical Review B 78 2008 205321-1 205321-17
15. R. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L.F. Lester, and D.L. Huffaker Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers Applied Physics Letters 91 2007 243115-1 243115-3
16. K.A. Sablon, J.W. Little, V. Mitin, A. Sergeev, N. Vagidov, and K. Reinhardt Strong enhancement of solar cell efficiency due to quantum dots with built-in charge Nano Letters 11 2011 2311 2317
17. C.D. Cress, S.M. Hubbard, B.J. Landi, R.P. Raffaelle, and D.M. Wilt Quantum dot solar cell tolerance to alpha-particle irradiation Applied Physics Letters 91 2007 183108-1 183108-3
18. A. Marti, N. Lopez, E. Antolin, E. Canovas, and A. Luque Emitter degradation in quantum dot intermediate band solar cells Applied Physics Letters 90 2007 233510-1 233510-3
19. S.M. Hubbard, C.D. Cress, C.G. Bailey, R.P. Raffaelle, S.G. Bailey, and D.M. Wilt Effect of strain compensation on quantum dot enhanced GaAs solar cells Applied Physics Letters 92 2008 123512-1 123512-3
20. C.G. Bailey, D.V. Forbes, S.J. Polly, Z.S. Bittner, Y. Dai, C. Mackos, R.P. Raffaelle, and S.M. Hubbard Open-circuit voltage improvement of InAs/GaAs quantum-dot solar cells using reduced InAs coverage IEEE Journal of Photovoltaics 2 2012 269 275
21. D.V. Forbes, C.G. Bailey, S. Polly, C. Plourde, J. Okvath, S.M. Hubbard, R.P. Raffaelle, Substrate orientation effects on quantum dot enhanced GaAs solar cells, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001804-001807.
22. D. Bimberg, M. Grundmann, and N.N. Ledentsov Quantum dot heterostructures 1999 John Wiley Chichester, New York
23. A.A. El-Emawy, S. Birudavolu, P.S. Wong, Y.B. Jiang, H. Xu, S. Huang, and D.L. Huffaker Formation trends in quantum dot growth using metalorganic chemical vapor deposition Journal of Applied Physics 93 2003 3529 3534
24. I. Garcia, I. Rey-Stolle, C. Algora, W. Stolz, and K. Volz Influence of GaInP ordering on the electronic quality of concentrator solar cells Journal of Crystal Growth 310 2008 5209 5213
25. L. Lazzarini, L. Nasi, G. Salviati, C.Z. Fregonara, Y. Li, L.J. Giling, C. Hardingham, and D.B. Holt Antiphase disorder in GaAs/Ge heterostructures for solar cells Micron 31 2000 217 222
26. M. Shinohara, and N. Inoue Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs Applied Physics Letters 66 1995 1936 1938
27. R. Leon, T.J. Senden, Y. Kim, C. Jagadish, and A. Clark Nucleation transitions for InGaAs islands on vicinal (100) GaAs Physical Review Letters 78 1997 4942 4945
28. S. Liang, H.L. Zhu, X.L. Ye, J.Q. Pan, L.J. Zhao, and W. Wang Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates Journal of Physics D:Applied Physics 42 2009 055310 (5pp)
29. B.D. Min, Y. Kim, E.K. Kim, S.-K. Min, and M.J. Park Suppression of ostwald ripening in In-{0.5}Ga-{0.5}As quantum dots on a vicinal (100) substrate Physical Review B 57 1998 11879 11882
30. C.G. Bailey, S.M. Hubbard, D. Forbes, and R. Raffaelle Evaluation of strain balancing layer thickness for InAs/ GaAs QD arrays using HRXRD and photoluminescence Applied Physics Letters 95 2009 203110-1 203110-3
31. D. Leonard, K. Pond, and P.M. Petroff Critical layer thickness for self-assembled InAs islands on GaAs Physical Review B 50 1994 11687 11692
32. G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Y. Tipissev, N.N. Ledentsov, P.S. Kop'ev, M. Grundmann, and D. Bimberg Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface Applied Physics Letters 67 1995 97 99
33. V.P. Evtikhiev, A.M. Boiko, I.V. Kudryashov, A.K. Kryganovskii, R.A. Suris, A.N. Titkov, and V.E. Tokranov Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation Semiconductor Science and Technology 17 2002 545 550
34. H. Saito, K. Nishi, and S. Sugou Shape transition of InAs quantum dots by growth at high temperature Applied Physics Letters 74 1999 1224 1226
35. H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dahne, Y. Temko, T. Suzuki, and K. Jacobi Change of InAs/GaAs quantum dot shape and composition during capping Journal of Applied Physics 104 2008 124301-1 124301-5
36. 2 window layers, in: Proceedings of the Photovoltaic Specialists Conference, Conference Record of the Twenty First IEEE, 1990, pp. 138-140.
37. G. Jolley, H.F. Lu, L. Fu, H.H. Tan, and C. Jagadish Electron-hole recombination properties of In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot solar cells and the influence on the open circuit voltage Applied Physics Letters 97 2010 123505-1 123505-3