Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence

Applied Physics Letters

Volumn 95, Issue 20, 2009, Pages

  Bailey, Christopher G ^a   Hubbard, Seth M ^a   Forbes, David V ^a   Raffaelle, Ryne P ^a  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM ELASTICITY THEORY; DEVICE PERFORMANCE; EMPIRICAL VALUES; GAP THICKNESS; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; IN-PLANE STRAINS; INAS/GAAS; LAYER THICKNESS; OPTICAL CHARACTERIZATION; OPTIMAL THICKNESS; PIN DIODE; PL INTENSITY; QUANTUM DOT ARRAYS; QUANTUM DOT SUPERLATTICES; STRAIN-BALANCED;

DIFFRACTION; GALLIUM ALLOYS; PHOTOLUMINESCENCE; SUPERLATTICES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70450253354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3264967     Document Type: Article

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