Formation trends in quantum dot growth using metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3529-3534

  El Emawy, A A ^a   Birudavolu, S ^a   Wong, P S ^a   Jiang, Y B ^a   Xu, H ^a   Huang, S ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DEFECTS; ELECTROLUMINESCENCE; GROUND STATE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

SURFACE DENSITIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037444945     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1543647     Document Type: Article

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