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Volumn 97, Issue 20, 2010, Pages

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(5) Wang, Jiaxing a Wang, Lai a Zhao, Wei a Hao, Zhibiao a Luo, Yi a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT-EMITTING; CARRIER LEAKAGE; CARRIER LOCALIZATION; DELOCALIZATIONS; EXTERNAL QUANTUM EFFICIENCY; HIGHER-DEGREE; INGAN/GAN; INJECTION CURRENTS; MULTIPLE QUANTUM WELLS; PHOTON ENERGY; TEMPERATURE DEPENDENT; UNDERLYING LAYERS;

CARRIER LIFETIME; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 78649231848 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3520139 Document Type: Article

Times cited : (117)

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