Defects and doping and their role in functionalizing graphene

MRS Bulletin

Volumn 37, Issue 12, 2012, Pages 1187-1194

  Pantelides, Sokrates T ^a   Puzyrev, Yevgeniy ^a   Tsetseris, Leonidas ^b   Wang, Bin ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONALIZATIONS; FUNCTIONALIZED; INTERSTITIALS; INTRINSIC DEFECTS; LINE DEFECTS; P-TYPE CONDUCTION; REACTIVE SITE; SENSOR APPLICATIONS; TWO-DIMENSIONAL MATERIALS;

ADSORBATES; DEFECTS; SEMICONDUCTOR DOPING; STRENGTH OF MATERIALS;

GRAPHENE;

EID: 84870020877     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs.2012.187     Document Type: Article

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