Vibrational modes of GaN nanowires in the gigahertz range

Nanotechnology

Volumn 23, Issue 49, 2012, Pages

  Johnson, W L ^a   Kim, S A ^a   Geiss, R ^a   Flannery, C M ^a,c   Bertness, K A ^a   Heyliger, P R ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Department of Mechanical Engineering   (United States)

^c CATERPILLAR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOMINANT MODE; FINITE ELEMENT MODELING; FINITE FREQUENCIES; GAN NANOWIRES; GIGAHERTZ RANGE; GUIDED MODES; HEXAGONAL CROSS-SECTIONS; INELASTIC LIGHT SCATTERING; ISOTROPIC CYLINDERS; MONOCRYSTALLINE; PLANE-STRAIN; STANDING WAVE; SURFACE RIPPLES; TORSIONAL DISPLACEMENTS; TRANSVERSE DISPLACEMENTS; VIBRATIONAL MODES; WAVE NUMBERS;

GALLIUM NITRIDE;

NANOWIRES;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; MICROWAVE RADIATION; PARTICLE SIZE; RADIATION SCATTERING; ULTRASTRUCTURE; VIBRATION;

COMPUTER SIMULATION; GALLIUM; MICROWAVES; MODELS, CHEMICAL; NANOSTRUCTURES; PARTICLE SIZE; SCATTERING, RADIATION; VIBRATION;

EID: 84870012218     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/49/495709     Document Type: Article

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