Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films

Sensors and Actuators, A: Physical

Volumn 165, Issue 1, 2011, Pages 59-65

  Montague, J R ^a   Dalberth, M ^b   Gray, J M ^a   Seghete, D ^a   Bertness, K A ^c   George, S M ^a   Bright, V M ^d   Rogers, C T ^a   Sanford, N A ^c  

^a UNIVERSITY OF COLORADO   (United States)

^b Cambridge NanoTech Inc   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d UCB 450   (United States)

Author keywords

Atomic layer deposition; Crystal resonators; Gallium compounds; III V semiconductors; Molecular beam epitaxial growth; Nanoelectronics; Nanowires; Piezoelectric oscillations; Piezoelectric semiconductors; Q factor; Resonators; Wide band gap semiconductors

Indexed keywords

III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXIAL GROWTH; PIEZOELECTRIC OSCILLATIONS; PIEZOELECTRIC SEMICONDUCTORS; Q-FACTORS; WIDE-BAND-GAP SEMICONDUCTOR;

ATOMIC LAYER DEPOSITION; ATOMS; CRYSTAL RESONATORS; ENERGY GAP; EPITAXIAL GROWTH; FORECASTING; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAMS; NANOELECTRONICS; NANOWIRES; NATURAL FREQUENCIES; PIEZOELECTRICITY; PLATINUM; Q FACTOR MEASUREMENT; RUTHENIUM; SEMICONDUCTOR GROWTH; STRUCTURE (COMPOSITION);

FILM GROWTH;

EID: 79951768579     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2010.03.014     Document Type: Conference Paper

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