Modification of the lattice thermal conductivity in semiconductor rectangular nanowires

Journal of Applied Physics

Volumn 93, Issue 2, 2003, Pages 1219-1229

  Lu X ^a   Chu, J H ^a   Shen, W Z ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

SEMICONDUCTOR NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0037439331     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1531810     Document Type: Article

References (50)

1. G. Chen, Int. J. Therm. Sci. 39, 471 (2000).
2. D. G. Cahill, K. Goodson, and A. Majumdar, J. Heat Transfer 124, 223 (2002).
3. R. N. Supino and J. J. Talghader, Appl. Phys. Lett. 78, 1778 (2001).
4. M. Asheghi, Y. K. Leung, S. S. Wong, and K. E. Goodson, Appl. Phys. Lett. 71, 1798 (1997).
5. M. N. Touzelbaev, P. Zhou, R. Venkatasubramanian, and K. E. Goodson, J. Appl. Phys. 90, 763 (2001).
6. The International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 2001).
7. J. W. Che, T. Çaĝin, and W. A. Goddard, Nanotechnology 11, 65 (2000).
8. J. Hone, M. Whitney, C. Piskoti, and A. Zettl, Phys. Rev. B 59, R2514 (1999).
9. P. Kim, L. Shi, A. Majumdar, and P. L. McEuen, Phys. Rev. Lett. 21, 215 502 (2001).
10. H. Jerminek, T. D. Pope, C. Alain, R. Zhang, F. Picard, M. Lehoux, F. Cayer, S. Savard, C. Larouche, and C. Grenier, Proc. SPIE 4028, 47 (2000).
11. M. A. Todd, P. A. Manning, P. P. Donohue, A. G. Brown, and R. Watton, Proc. SPIE 4130, 128 (2000).
12. X. Gu, G. Karunasiri, G. Chen, U. Sridhar, and B. Xu, Appl. Phys. Lett. 72, 1881 (1998).
13. P. Neuzil and T. Mei, Appl. Phys. Lett. 80, 1838 (2002).
14. X. He, G. Karunasiri, T. Mei, W. J. Zeng, P. Neuzil, and U. Sridhar, IEEE Electron Device Lett. 21, 233 (2000).
15. S. Sedky, P. Fiorini, K. Baert, L. Hermans, and R. Mertens, IEEE Trans Electron Devices 46, 675 (1999).
16. T. Koga, O. Rabin, and M. S. Dresselhaus, Phys. Rev. B 62, 16 703 (2000).
17. M. S. Dresselhaus, G. Dresselhaus, X. Sun, Z. Zhang, S. B. Cronin, and T. Koga, Phys. Solid State 41, 679 (1999).
18. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn, Nature (London) 413, 597 (2001).
19. P. Hyldgaard and G. D. Mahan, Thermal Conductivity 23 (Technomic, Lancaster, PA, 1996), p. 172.
20. S. G. Walkauskas, D. A. Broido, K. Kempa, and T. L. Reineke, J. Appl. Phys. 85, 2579 (1999).
21. X. Lü, W. Z. Shen, and J. H. Chu, J. Appl. Phys. 91, 1542 (2002).
22. A. Balandin and K. L. Wang, Phys. Rev. B 58, 1544 (1998).
23. A. Khittun, A. Balandin, and K. L. Wang, Superlattices Microstruct. 26, 181 (1999).
24. J. Zou and A. Balandin, Electrochem. Soc. Proc., 19, 70 (2001).
25. J. Zou and A. Balandin, J. Appl. Phys. 89, 2932 (2001).
26. L. G. C. Rego and G. Kirczenow, Phys. Rev. Lett. 81, 232 (1998).
27. L. G. C. Rego, Phys. Status Solidi A 187, 239 (2001).
28. K. Schwab, E. A. Henriksen, J. M. Worlock, and M. L. Roukes, Nature (London) 404, 974 (2000).
29. K. Schwab, J. L. Arlett, J. M. Worlock, and M. L. Roukes, Physica E (Amsterdam) 9, 60 (2001).
30. D. H. Santamore and M. C. Cross, Phys. Rev. Lett. 87, 115 502 (2001).
31. D. H. Santamore and M. C. Cross, Phys. Rev. B 63, 184 306 (2001).
32. R. W. Morse, J. Acoust. Soc. Am. 20, 833 (1948).
33. R. W. Morse, J. Acoust. Soc. Am. 22, 219 (1950).
34. N. Nishiguchi, Y. Ando, and M. N. Wybourne, J. Phys.: Condens. Matter 9, 5751 (1997).
35. N. Nishiguchi, Y. Ando, and M. N. Wybourne, Superlattices Microstruct. 22, 213 (1997).
36. L. Landau and E. M. Lifshitz, Theory of Elasticity (Pergamon, London, 1959), p. 99.
37. H. H. Landolt and R. Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series Vol. 17b (Springer, Berlin, 1982).
38. B. A. Auld, Acoustic Fields and Waves in Solids (Wiley, New York, 1973), p. 117.
39. SeGi Yu, K. W. Kim, M. A. Stroscio, G. J. Iafrate, and A. Ballato, Phys. Rev. B 50, 1733 (1994).
40. G. A. Slack and S. Galginaitis, Phys. Rev. 133, A253 (1964).
41. P. G. Klemens, Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1958), Vol. 7, p. 1.
42. B. R. Nag, Electron Transport in Compound Semiconductor (Springer, Berlin, 1980), p. 174.
43. B. K. Ridley, Quantum Processes in Semiconductor (Clarendon, Oxford, 1982), p. 128.
44. D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florescu, and F. H. Pollak, Appl. Phys. Lett. 79, 4316 (2001).
45. M. N. Wybourne, B. J. Kiff, D. N. Batchelder, D. Greig, and M. Sahota, J. Phys. C 18, 309 (1985).
46. B. Dreyfus, Proceedings 1st International Conference on Phonon Scattering in Solids, edited by J. J. Albany (CEN-Saclay, Paris, 1972), p. 207.
47. C. M. Murray, M. N. Wybourne, D. N. Batchelder, and P. A. R. Ade, J. Phys.: Condens. Matter 2, 257 (1990).
48. P. Vonlanthen, S. Paschen, D. Pushin, A. D. Bianchi, H. R. Ott, J. L. Sarrao, and Z. Fisk, Phys. Rev. B 62, 3246 (2000).
49. H. B. G. Casimir, Physica (Amsterdam) 5, 495 (1938).
50. R. G. Chambers, Proc. R. Soc. London, Ser. A 202, 375 (1950).