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Volumn 12, Issue SUPPL.3, 2012, Pages
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Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)
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Author keywords
4H SiC; Conduction band offset; Energy band alignment; MOS devices; SiO2 SiC interface; Thermal oxide
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Indexed keywords
4H-SIC;
ANNEALED SAMPLES;
AREAL DENSITIES;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
CONDUCTION BAND OFFSET;
DRY OXYGEN;
ELECTRICAL CHARACTERIZATION;
ENERGY-BAND ALIGNMENT;
ENERGY-LOSS SPECTRUM;
FLAT-BAND VOLTAGE;
FOWLER-NORDHEIM PLOTS;
HIGH TEMPERATURE;
INTERFACE CHARGE;
INTERFACE PROPERTY;
LINEAR RELATIONSHIPS;
METAL OXIDE SEMICONDUCTOR;
NEGATIVE FIXED CHARGE;
OXIDE THICKNESS;
POST-OXIDATION;
THERMAL OXIDATION;
THERMAL OXIDES;
VALENCE BAND SPECTRA;
XPS ANALYSIS;
ALIGNMENT;
ANNEALING;
BAND STRUCTURE;
ELECTRIC PROPERTIES;
ENERGY DISSIPATION;
GATE DIELECTRICS;
MOS CAPACITORS;
MOS DEVICES;
OXIDATION;
PHOTOELECTRONS;
X RAY PHOTOELECTRON SPECTROSCOPY;
SILICON CARBIDE;
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EID: 84869501960
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2012.04.008 Document Type: Article |
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Times cited : (24)
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References (20)
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