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Volumn 679-680, Issue , 2011, Pages 386-389
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Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer
a
c
ROHM CO LTD
(Japan)
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Author keywords
Conduction band offset; Energy band structure; Interface defects; MOS devices; Synchrotron radiation x ray photoelectron spectroscopy
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Indexed keywords
BAND STRUCTURE;
CHARGE TRANSFER;
CONDUCTION BANDS;
METALS;
MOS DEVICES;
OXIDE SEMICONDUCTORS;
PHOTOELECTRONS;
PHOTONS;
SILICA;
SILICON CARBIDE;
SILICON OXIDES;
SYNCHROTRON RADIATION;
SYNCHROTRONS;
WIDE BAND GAP SEMICONDUCTORS;
X RAY PHOTOELECTRON SPECTROSCOPY;
CONDUCTION BAND OFFSET;
GATE OXIDE RELIABILITY;
HIGH CARRIER MOBILITY;
INTERFACE DEFECTS;
METAL OXIDE SEMICONDUCTOR;
SIO2/SIC INTERFACE;
SUBSTRATE ORIENTATION;
SYNCHROTRON RADIATION X-RAYS;
SUBSTRATES;
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EID: 79955108893
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.679-680.386 Document Type: Conference Paper |
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Times cited : (32)
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References (7)
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