Reliability of 4H-SiC(000-1) MOS gate oxide using N2O nitridation

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 557-560

  Suzuki, Takuma ^a,b   Senzaki, Junji ^c   Hatakeyama, Tetsuo ^a,b   Fukuda, Kenji ^c   Shinohe, Takashi ^a,b   Arai, Kazuo ^c  

^a TOSHIBA CORPORATION   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

(000 1); Carbon face; Gate oxide; Interface trap density; MOSFET; Reliability

Indexed keywords

ALUMINUM NITRIDE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); METALS; MOS DEVICES; NITRIDATION; OXIDE SEMICONDUCTORS; RELIABILITY; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

(000-1); CONDUCTION BAND OFFSET; GATE OXIDE; INTERFACE TRAP DENSITY; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MOS-FET; PYROGENIC OXIDATION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOSFET DEVICES;

EID: 77958555446     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.557     Document Type: Conference Paper

References (5)

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